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Faculty Profile

Associate Professor

Department of Electronic Sc.

A.R.S.D. College

DhaulaKuan,

New Delhi-110021.

Mobile: 9810089432

Email: jogijyotika@rediffmail.com

          jjogi@arsd.du.ac.in

 

Educational Qualification

Educational Qualifications

Degree                 

Institution

Year

      Ph.D

University of Delhi

2003

M.Phil.

University of Delhi

1990

M.Sc.(Electronic Sc.)

Department Of Electronic Science,

University Of Delhi

1988

B.Sc(Hons)Physics.

Miranda House,

University Of Delhi.

1986

LLB

Faculty  OF LAW,

University of Delhi

2008

Career Profile

Career Profile

PERIOD

DESIGNATION

INSTITUTION

24 May 2012 –Till Date

Associate Professor in Electronics

Atma Ram Sanatan Dharma College,

University of Delhi.

15 Sep. 2011-24 May2012

Associate Professor in Electronics

(Faculty On Deputation)

Cluster Innovation Centre,

University of Delhi.

26 Sep. 1991-14 Sep. 2011

Lecturer, Reader, Associate Professor in Electronics

Atma Ram Sanatan Dharma College,

University of Delhi.

19 Aug.1988-26 Sep. 1991

Lecturer in Electronics

Sri Venkateswara College,

University of Delhi.

Areas of Specialization / Interest

Modeling and Simulation of Microelectronic devices and Nano dimensional Quantum Heterostructures.

Subjects Taught

Various Undergraduate and Postgraduate courses like- Network analysis, Semiconductor Electronics, Analog and Digital Communication, Linear Algebra. Engineering Mathematics etc under the following programs;

1.                  B.Tech (Electronics)

2.                  M.Sc. Electronic Sc.

3.                  B.Tech in Innovation with Mathematics and IT 

4.                  B.Sc (Hons) Electronics

5.                  B.Sc. (Hons). Physics.

6.                  B.Sc. (Prog / Gen) Electronics.

 

Research Projects (Major Grants/Research Collaboration)

Successfully completed a Major Research Project Sponsored by The University Grants Commission entitled, “Modeling, Simulation and Study of Noise Performance and Noise  Characteristics of Double Gate InP-based InAlAs/InGaAs High  Electron Mobility Transistors for High Power and Tera Hz  Frequency Applications” during Feb2010 and Jan-2013.

Publications Profile

1.       Suleshma Katiyar, R.S. Gupta and Jyotika Jogi, “Simulation of Pentacene/Alq3 Bilayer OLET to Analyze the Effect of Alq3 Layer Thickness and Asymmetric Contacts on Device Performance”, International Conference on Electrical and Electronics Engineers (ICE3), Madan Mohan Malaviya University of Technology, Gorakhpur (U.P.), India, February 14-15, 2020, ISBN: 978-1-7281-5846-4/20 ©2020 IEEE.

 

2.       Suleshma Katiyar and Jyotika Jogi, “Gate Tunable Electro-Luminescence in Asymmetric Vertical Heterojunction OLET Based on Pentacene and Alq3- A Simulation Study”, 5th IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE), Bangalore, India, November 15-16, 2019, ISBN:978-1-7281-4499-3/19 ©2019 IEEE.

 

3.       Neetika Sharma, Amit Saini, and Jyotika Jogi, “Investigating Ballistic Transport In Nano-Dimensional InAlAs/InGaAs HEMT At Cryogenic Temperature”, IOSR Journal Engineering (IOSR-JEN), Vol. 08, Issue 6 (ver. V), pp. 18-25, June 2018. ISSN (e): 2250-3021, ISSN (p): 2278-8719.

 

4.       Pritam Sharma, Neetika Sharma, R.S.Gupta and Jyotika Jogi, “Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications” UKSim-AMSS 20th International Conference on Modelling & Simulation, Cambridge University (Emmanuel College), pp. 181-185, 27 - 29 March 2018. DOI 10.1109/UKSim.2018.00043.

 

5.       Neetika Sharma, Neha Verma, and Jyotika Jogi “A Novel Analytical Model for Scattering Limited Electron Transport in Nano-Dimensional InAlAs/InGaAs Heterostructure for Cryogenic Applications”, In press Journal “Superlatice and Microstructure”, 2017, ISSN: 0749-6036, DOI- 10.1016/j.spmi.2017.08.016.

 

6.       Pritam Sharma, R. S Gupta and Jyotika Jogi, “Modeling the Optoelectronic Properties of InAlAs/InGaAs HEMT for Improved Millimeter Wave Applications,” In the proceedings of International Conference on microwave and Optical technology (ISMOT-2017), Yeouido, Seoul Korea, June 26-28, 2017, ISBN: 978-89-93246-28-5

 

7.       Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Influence of Gate Leakage Current Induced Shot Noise on the Minimum Noise Figure of InAlAs/InGaAs Double-Gate HEMT”, In press Journal “Superlatice and Microstructure”, 2017, ISSN: 0749-6036, DOI- 10.1016/j.spmi.2017.02.026

 

8.       Neetika Sharma, R. S. Gupta and Jyotika Jogi, “Carrier Concentration Dependence of Ballistic Mobility and Mean Free Path in a Nano Dimensional InAlAs/InGaAs Single Gate HEMT, In proceeding 3rd IEEE Uttar Pradesh Section International Conference on Electrical, Computer and Electronics, December 09-11, 2016, IIT(BHU), Varanasi, India. ISBN: 978-1-5090-5384-1

 

9.       Neetika Sharma, Pritam Sharma and Jyotika Jogi, “Mobility Degradation in Nano-Dimensional InAlAs/InGaAs Single Gate HEMT”,In proceeding IEEE Conference TENCON 2016, November 22-25 2016, Marina Bay Sands, Singapore, ISSN:2159-3450, ISBN: 978-1-5090-2596-1.

 

10.   Parveen, Neetika Sharma and Jyotika Jogi, “Comprehensive Noise Performance Assessment of Separate Gate Control in InAlAs/InGaAs/InAlAs Double Gate HEMT” ,In  proceeding Advances in Nanomaterials and Nanotechnology ICANN 2016, pp-36, November 04 - 05, 2016, Jamia Milia Islamia, New Delhi-110025, India. ISBN: 978-93-85000-94-2.

 

11.   Pritam Sharma and Jyotika Jogi, “Analysis of 100 nm InAlAs/InGaAs HEMT under Optical Illumination” In proceeding Advances in Nanomaterials and Nanotechnology ICANN 2016, pp-29, November 04 - 05, 2016, Jamia Milia Islamia, New Delhi-110025, India. ISBN: 978-93-85000-94-2.

 

12.   Pritam Sharma, R.S. Gupta and Jyotika Jogi, “Simulation of Device Behavior for InAlAs/InGaAs HEMT under Optical Illumination,” The Eighth International Conference on Advances in System Simulation, SIMUL 2016, pp-52-55, August 21 - 25, 2016, Rome, Italy, ISSN: 2308-4537, ISBN: 978-1-61208-501-2.

 

13.   Neha Verma, Parveen, and Jyotika Jogi, “Quantum Simulation of a Double Gate Double Heterostructure InAlAs/InGaAs HEMT to Analyze Temperature Effects,” International Journal of Simulation, Systems, Science and Technology (IJSSST), Vol. 16, no. 3, pp. 10.1-10.8, Jan,2016, e-ISSN: 1473-804, p-ISSN: 1473-8031, DOI: 10.5013/IJSSST.a.16.10.

 

14.   Parveen, Neha Verma, Monika Bhattacharya, and Jyotika Jogi, “A Novel Separate Gate InAlAs/InGaAs/InAlAs DG-HEMT Heterogeneous Mixer,” IEEE Conference TENCON 2015, pp. 89, Nov 1-4, 2015, Macau, ISSN: 2159-3442, p-ISBN: 978-1-4799-8639-2, DOI: 10.1109/TENCON.2015.7373028.

 

15.   Parveen, Monika Bhattacharya, and Jyotika Jogi, “Modeling of InAlAs/InGaAs/InAlAs DG-HEMT Mixer for Microwave Application,” International Organization of Scientific Research, Journal of Electronic and Communication Engineering (IOSR-JECE), Vol. 10, no. 4 (version I), pp. 20-29, Jul-Aug. 2015, DOI: 10.9790/2834-10422127, e-ISSN: 2278-1676, p-ISSN: 2320-3331, Impact Factor: 1.452.

 

16.   Neha Verma, Parveen, and Jyotika Jogi, “Quantum Simulation of a Double Gate Double HeterostructureInAlAs/InGaAs HEMT to Analyze Temperature Effects,” IEEE Conference, 17th UKSIM-AMSS International Conference on Modelling and Simulation, March 25-27, 2015, Cambridge University, UK, ISBN: 978-1-4799-8713-9, DOI:10.1109/UKSim.2015.39

 

17.   Parveen, Neha Verma and Jyotika Jogi, “Impact of Doping Concentration and Temperature variation on the Noise Performance of Separate Gate InAlAs/InGaAs DG-HEMT”, IEEE Conference TENCON 2014, Oct. 22-25, 2014, Bangkok, Thailand, ISBN: 978-1-4799-4076-9, DOI:10.1109/TENCON.2014.7022339.

 

18.   Neha Verma, Parveen, and Jyotika Jogi, “Effect of Variation in Channel Thickness on Eigenenergies of Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT”, IEEE Conference TENCON 2014, Oct. 22-25, 2014, Bangkok, Thailand, ISBN: 978-1-4799-4076-9, DOI:10.1109/TENCON.2014.7022286.

 

19.   Parveen, Monika Bhattacharya, and Jyotika Jogi, “Evaluation of Noise Coefficients for Separate Gate InAlAs/InGaAs Double Heterostructure DG-HEMT”, International Journal of Engineering Research and Development (IJERD), Vol. 10, No. 8, pp. 01-11, August 2014. MID:1008.067X.0001. India

 

20.   Neha Verma, Mridula Gupta, Enakshi Khular Sharma, R. S. Gupta, and Jyotika Jogi, “Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications,” IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE), Vol. 9, Issue 3 (ver. I), pp. 20-29, May-June 2014.DOI: 10.9790/1676-09312029

 

21.   NehaVerma, Enakshi Khular Sharma, Jyotika Jogi, “Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InGaAs Double Heterostructure HEMT,” IOSR Journal of Electrical and Electronics Engineering, Vol. 9, No. 1(ver. 4), pp. 20-28, February 2014. DOI:10.9790/1676-09142028

 

22.   NehaVerma, Enakshi Khular Sharma, Jyotika Jogi, “Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT”, EEIC 2013, pp. 14-16, Hong Kong, China, December 24-25, 2013.  DOI: 10.2991/eeic-13.2013.4

 

23.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Impact of Temperature and Indium composition in the channel on the microwave performance of single-gate and double-gate InAlAs/InGaAs HEMT”, IEEE Transactions on Nanotechnology, Vol. 12, No. 6, pp. 965-970, November 2013. DOI: 10.1109/TNANO.2013.2276415.

 

24.   Parveen, Mridula Gupta, R.S. Gupta, Jyotika Jogi, "RF Characterization of 100nm Separate Gate InAlAs/InGaAs DG-HEMT”, Microwave Optical Technology Letters (MOTL), Vol. 55, No. 11, pp. 2796-2803, November 2013. DOI:10.1002/mop.27935

 

25.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-Gate HEMT”, Journal of Semiconductor Technology And Science, Vol. 13, No. 4, pp. 331-341, August 2013. DOI: http://dx.doi.org/10.5573/JSTS. 2013.13.4331.

 

26.   NehaVerma, , Mridula Gupta, R.S. Gupta, Jyotika Jogi, “Quantum Modeling of Nanoscale Symmetric Double- Gate InAlAs/InGaAs/InP HEMT”, Journal of Semiconductor Technology And Science, Vol. 13, No. 4, pp. 342-354, August 2013. DOI: http://dx.doi.org/10.5573/JSTS. 2013.13.4342.

 

27.   Parveen, Mridula Gupta, R.S. Gupta, Jyotika Jogi, “Intrinsic Admittance Parameter for Separate Gate InAlAs/InGaAs DG-HEMT for 100 nm Gate length”, IEEE ICT 2013, IEEE Conference on Information and Communication Technologies, pp. 750-754, Noorul Islam University, Thuckalay, Tamil Nadu, India, April 11-12, 2013. DOI: 10.1109/CICT.2013.6558194

 

28.   Neha Verma, Parveen, Jyotika Jogi, “Quantum Simulation for Separate Double Gate InAlAs/InGaAs HEMT”, IEEE ICT 2013, IEEE Conference on Information and Communication Technologies, pp. 765-769, Noorul Islam University, Thuckalay, Tamil Nadu, India, April 11-12, 2013.DOI: 10.1109/CICT.2013.6558197

 

29.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, "Temperature Dependent Analytical Model for Microwave and Noise Performance Characterization of In0.5Al0.48As/InmGa1-mAs (0.53 ≤ m ≤ 0.8) DG-HEMT", IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 1, pp. 293-299, March 2013.DOI:10.1109/TDMR.2013.2243913.

 

30.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Impact of Noise Temperature Constant and Diffusion Coefficient on the Minimum Noise Figure and Minimum Noise Temperature of InAlAs/InGaAs DGHEMT”, IEEE ICEE 2012(International Conference on Emerging Electronics), Proceedings of ICEE 2012, pp. 11-14, IIT Bombay, Powai, Mumbai, India, Dec. 15-17, 2012.

 

31.   Neha Verma, Mridula Gupta, R.S. Gupta, Jyotika Jogi “Nano-modeling of the Doping Profiles for a Symmetric Double Gate InAlAs/InGaAs/InP HEMT”,IEEE Xplore, TENCON-2012, Philippines, Cebu, November 19-22, 2012. DOI: http://dx.doi.org/10.1109/TENCON.2012.6412229.

 

32.   Parveen, SweetySupriya, Dushyant Gupta, Jyotika Jogi, “A Novel Analytical Model for Small Signal Parameter for Separate Gate InAlAs/InGaAs DG-HEMT”,IEEE Xplore,TENCON-2012, Philippines, Cebu, November 19-22,2012. DOI: http://dx.doi.org/10.1109/TENCON.2012.6412183.

 

33.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Temperature and Channel Indium Composition sensitivity Analysis of the of the Small Signal Equivalent Circuit Parameters of SG- and DG- InAlAs/InGaAs HEMT”, NANOCON 2012(2nd International Conference on Nanotechnology-Innovative materials, Processes, Products and Applications) Conference Proceedings, pp. 1199-1208, Pune, India, October 18-19, 2012.

 

34.   Parveen, Mridula Gupta, R.S Gupta, Jyotika Jogi, “Scattering Parameter for Separate Gate InAlAs/InGaAs/InP based DG-HEMT for 100nm Gate Length”, NANOCON2012 (2nd International Conference on Nanotechnology-Innovative materials, Processes, Products and Applications) Conference Proceedings, pp.1144-1154, Pune, India, October 18-19, 2012.

 

35.   SweetySupriya, NehaVerma, Jyotika Jogi, “Ballistic Mobility Degradation in Effect in 25 nm Single Gate HEMT”, NANOCON 2012 (2nd International Conference on Nanotechnology-Innovative materials, Processes, Products and Applications) Conference Proceedings, pp.1155-1165, Pune, India, October 18-19, 2012.

 

36.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “An Accurate charge Control Based Approach For Noise Performance Assessment of a Symmetric Tide-gate InAlAs/InGaAs DG-HEMT” IEEE Transaction on Electron Devices, Vol.59, No.6, TED-2012-01-0044-R, pp. 1644-1652, June, 2012.DOI: 10.1109/TED.2012.2190738.

 

37.   NehaVerma,  Mridula Gupta, R.S. Gupta, Jyotika Jogi, “Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT”, UKSIM-2012,14th International Conference on Modeling and Simulation, IEEE-CSDL, pp.660-664, Cambridge, UK, March, 2012. DOI: http://doi.ieeecomputersociety.org/10.1109/UKSim.2012.101

 

38.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “A Comprehensive charge control based analysis of the effect of Donor-layer doping and donor layer  thickness on the P, R and C Noise coefficients of a symmetric Tide-gate InAlAs/InGaAs DG-HEMT’’, IWPSD,16th International Workshop on the Physics of Semiconductor Devices, IITKanpur, Kanpur, India, Vol. 8549, pp. 854903-1-85903-6, December 19-22, 2011. DOI:10.1117/12.925320

 

39.   Parveen, Mridula Gupta, R.S. Gupta, Jyotika Jogi, “Analytical modeling of Enhanced Performance of  Separate Gate In0.52Al0.48As-In0.53Ga0.47As DG-HEMT for Nanometer Gate Dimension”, International Conference on Microwave, Antenna and Remote Sensing (ICMARS), pp. 162-164, Jodhpur, Rajasthan, India, December 7-9, 2011.

 

40.   Neha Verma, Mridula Gupta, R.S. Gupta, Jyotika Jogi, “Quantum Modeling of Electron confinement in Double Triangular Quantum well formed in Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT”, IEEE ISDRS, University of Maryland, College Park, MD, USA, December 7-9, 2011. DOI: 10.1109/ISDRS.2011.6135353

 

41.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “A Comprehensive Analytical approach for the evaluation of the P, R and C noise coefficients of  InAlAs/InGaAs DG-HEMT”, IEEE TENCON, pp. 1131-1134, Bali, Indonesia, November 21-24, 2011. DOI: 10.1109/TENCON.2011.6129288

 

42.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimetre-wave applications”, Solid-State Electronics, Vol. 63, No. 1, pp.149–153,September 2011.DOI: http://dx.doi.org/10.1016/j.sse.2011.05.025

 

43.   Dushyant Gupta, B. Prasad, Jyotika Jogi, P.J. George, "A Generalized Analytical Model of a Multispecies Plasma Immersion Ion Implantation Process in a Collisionless System", Journal of Materials Science and Engineering, Vol. 1, No. 3B,  pp. 372-377, August 2011.DOI: http://dx.doi.org/10.1016/j.sse.2011.05.025

 

44.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “An Analytical study of the impact of gate-bias on the scattering parameters of a symmetric tied-gate InAlAs/InGaAs DG-HEMT”, International Symposium on Models and Modeling Methodologies in Science and Engineering (IS-MMMSe),Orlando, Florida, USA. July 19-22, 2011.

 

45.   Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta, “A Comprehensive Analytical Approach for drain-noise source and gate-noise source modeling of InAlAs/InGaAs DG-HEMT”, International Conference on microwave and Optical technology (ISMOT), Prague, Czech Republic, EU, June 20-23, 2011.

 

46.   Parveen, R.S. Gupta, Mridula Gupta and Jyotika Jogi, “Analytical modeling of the dynamic performance of   In0.52Al0.48As-In0.53Ga0.47As Separate gate DG-HEMT for nanometer gate dimension”, International Conference on microwave and Optical technology (ISMOT), Prague, Czech Republic, EU, June 20-23, 2011.

 

47.   Monika Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta, “Analytical Modeling of Intrinsic Y-parameters to study the enhanced microwave performance of symmetric tied-gate InAlAs/InGaAs/InP DG-HEMT”, International Conference on Signal, Systems and Automation (ICSSA), pp. 497-502, Gujarat, India, January 24-25, 2011.

 

48.   Monika Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta, "An Analytical study of Enhanced Microwave Performance of symmetric Double-gate InAlAs/InGaAs/InP HEMT over Single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension", International Conference on Microwave, Antennal and Remote Sensing (ICMARS), Jodhpur, Rajasthan, India, December 14-17, 2010.

 

49.   Jyotika Jogi, "Researcher or Attention Grabber? Is Intellectual Property a Means to Communicate Scientifically?",Conf. Proceedings of The 11th International Conference on Public Communication of Science & Technology, PCST 2010, pp. 625-628, New Delhi, India, December 06-10, 2010.

 

50.   Monika Bhattacharya, Jyotika Jogi, R.S Gupta and Mridula Gupta, "Impact of Doping concentration and Donor- layer thickness on the dc characterization of symmetric Double-gate and Single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension-A comparison", IEEE Xplore, IEEE TENCON, pp. 134-139, Fukuoka, Japan, November 21-24, 2010. DOI :10.1109/TENCON.2010.5685856

 

51.   ServinRathi, Jyotika Jogi, Mridula Gupta, R.S. Gupta, " An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47 as a separated double-gate HEMT”, Semiconductor Science and Technology (SST), Vol. 25, No. 11, October 2010. DOI: http://dx.doi.org/10.1088/0268-1242/25/11/115003

 

52.   Dushyant Gupta, Jyotika Jogi, P.J.George,“An Analytical Model of a Multispecies Plasma Immersion Ion Implantation Process in a Collisionless System”, NGC2009 & CST2009 conference, McMaster University, Hamilton, Ontario, Canada, Conference Proceedings, pp. 215, August10-14, 2009.

 

53.   ServinRathi, Jyotika Jogi, Mridula Gupta and R.S. Gupta, “Modeling of Short-Channel Threshold Voltage for Tied and Separate Nanoscale In0.52Al 0.48AsIn0.53Ga0.47As Symmetric Double-Gate HEMT”, (Paper ID: 83) 12th International Symposium of Microwave and Optical Technology (ISMOT 2009), New Delhi, December16-19, 2009.

 

54.   Dushyant Gupta, Jyotika Jogi, P.J.George, “Doping Estimation in a Microwave based Plasma Immersion Ion Implantation System, implementing Sheath Models”, (Paper ID: 39) 12th International Symposium of Microwave and Optical Technology , (ISMOT 2009), New Delhi, December16-19, 2009.

 

55.   ServinRathi, Jyotika Jogi, Mridula Gupta and R S Gupta, "Modeling of Hetero-Interface Potential and Threshold Voltage for Tied and Separate Nanoscale InAlAs-InGaAs Symmetric Double-Gate HEMT", Microelectronic Reliability, Vol. 49, Issue 12, pp. 1508–1514, December 2009. DOI: http://dx.doi.org/10.1016/j.microrel.2009.07.044

 

56.   Sujata Pandey, Jyotika Jogi, R. S. Gupta, “Model Design and Analysis of Temperature and Al Composition Dependent Transport Properties of Sub-micron AlGaAs/GaAs HEMT: A New Approach”, ,pp.567-569, Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices, Madras, India, Vol.1,December 14-20, 2003.

 

57.   Jyotika Jogi, Sujata Pandey, R.S.Gupta, “Temperature Dependent Characterization of InAlAs/InGaAs/InP LMHEMT for Microwave Frequency Application”, International Symposium on Microwave and Optical Technology,Ostrava, Czech Republic, pp.290-293,Proceedings of SPIE,  Vol.5445, August 11-15, 2003.

 

58.   Vandana Guru, Jyotika Jogi, Mridula Gupta, H.P. Vyas and R.S. Gupta, “An improved intrinsic small-signal equivalent circuit model of delta-doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications” ,. Microwave and Optical Technology Letters, Vol. 37, no. 5, pp. 376-379, June2003. DOI: 10.1002/mop.10923

 

59.   Jyotika Jogi, Mridula Gupta, R. S. Gupta., “Temperature and In Mole Fraction Dependent Characterization InAlAs/InGaAs/InP LMHEMT for Microwave Frequency Application” International conference on Low Dimensional Structures and Devices, Brazil, Dec 2002.

 

60.   Jyotika Jogi, Sujata Sen, Mridula Gupta, R.S. Gupta, “An analytical two-dimensional model for drain-induced barrier lowering in sub-quarter-micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT” Microelectronics Journal, Vol. 33, No.8, pp. 633-638, July, 2002. http://dx.doi.org/10.1016/S0026-2692(02)00033-2

 

61.   Jyotika Jogi, Mridula Gupta, R. S. Gupta“A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency”, , Microelectronics Journal, Vol. 32, No. 12, pp. 925-930, 2001.http://dx.doi.org/10.1016/S0026-2692(01)00088-X

 

62.   Jyotika Jogi, Mridula Gupta, R.S.Gupta, “Modeling of current-voltage characteristics and Transconductance of Extrinsic Lattice Matched InAlAs/InGaAs/InP HEMT for Very High Frequency Application”, Eleventh International Workshop onPhysics of Semiconductor Devices, (IWPSD-2001), IIT Delhi, India, Vol. 2, pp. 870-873, December 11-15, 2001.

 

63.   Jyotika Jogi, Mridula Gupta, R.S.Gupta, “A new model for lattice matched InAlAs/InGaAs/InP HEMT for microwave applications”, 8th International Symposium on Microwave and Optical Technology, Montreal, Canada, pp.533-536, June 20-24, 2001.

 

64.   Jyotika Jogi, Mridula Gupta, R. S. Gupta, "Carrier concentration dependent low field mobility model for InAlAs/InGaAs/InP lattice Matched HEMT for Microwave Applications, Microwave and Optical Technology Letters, Vol. 29, No.1, pp. 66-70, April 5 2001.DOI: 10.1002/mop.1085

 

 

65.   Jyotika Jogi, Mridula Gupta, R. S. Gupta, "A new analytical model for current-voltage characteristics of InAlAs/InGaAs High electron mobility Transistor", National Symposium on Advance in Microwave and Light waves, New Delhi, pp. 84-87, March 25-28, 2000.

 

 

Conference Participation / Presentations

 

  1.    Session Chair, IEEE UKSim 2018, 20th International Conference on Modeling and Simulation, Cambridge University(Emmanuel College), March 27-29, 2018.
  2.      Paper presentation in IEEE UKSim 2018, 20th International Conference on Modeling and Simulation, Cambridge University(Emmanuel College), March 27-29, 2018.
  3.      Delivered an Expert Seminar Lecture on “Heterostructure, Modeling the 2DEG to analyse HEMT as a High Speed Low Noise Quantum Device”, at PBRC, KwangwoonUniversity,Seoul, Korea, 22 June, 2017.
  4.     Paper presentation at ISMOT 2017, 16th International Symposium on Microwave and optical Technology, Seoul, Korea, June 26-28, 2017.
  5.      Paper presentation at UPCON 2016, 3rd IEEE UP Section International Conference on Electrical, Computer and Electronics Engineering, IIT(BHU) Varanasi, UP, India, December 9-11, 2016.
  6.     Paper presentation at UKSim 2015,17th International Conference on Modeling and Simulation, Cambridge University(Emmanuel College), March 25-27, 2015.
  7. Successfully completed a course on "Nanotechnology Journey from Quantum Physics to Nanoengineering", Jointly organised by Department of Electronic Science, University of Delhi South Campus, new Delhi, India, January 28,2014.
  8.        Paper presentation at EEIC 2013, Hong Kong, December 24-25, 2013.
  9.        Paper presentation in IEEE TENCON 2012, Cebu, Philippines, November 19-22, 2012.
  10.     Session Chair, IEEE UKSim 2012, 14th International Conference on Modeling and Simulation, Cambridge University(Emmanuel College), March 28-30, 2012.
  11.       Paper presentation in IEEE UKSim 2012, 14th International Conference on Modeling and Simulation, Cambridge University(Emmanuel College), March 28-30, 2012.
  12.       Participation in Mini- Colloquia on “Compact Modeling Techniques for Nano-scale Devices and Circuit Analysis”, sponsored by IEEE Electron Devices Society,  S.P. Jain Centre Auditorium, University of Delhi South Campus, New Delhi, March 14-15 2012.
  13.       Paper presentation in 13th International Symposium on Microwave and Optical Technology (ISMOT-2011), Prague, Czech Republic, June 20-23, 2011.
  14.      Organized an E-Yantra Robotics Workshop at Cluster Innovation Centre,  University of Delhi in December, 28-29,2011.
  15.        Paper presentation in 11th International Conference on Public Communication of Science &Technology (11th PCST-2010), New Delhi, India, December 06-10, 2010.
  16.         Paper presentation in IEEE TENCON 2010, Fukuoka, Japan, November 21-24, 2010.
  17.     Cultural secretary, 12thInternational Symposium of Microwave and Optical Technology ,(ISMOT)2009, New Delhi,16-19 December, 2009.
  18.      Participation in 18th WIMNACT-MQ3, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology, Mini-Colloquia on Compact Modeling and fabrication Techniques of Advance MOSFET/HEMT Structures”, New Delhi, India, June 04-05, 2009.                                                                          
  19.        Participation in CDAMOP,2nd International Conference on Current Developments in Atomic, Molecular & Optical Physics with applications, Delhi University, Delhi, March 21-23, 2006.
  20.      Paper presentation in 8th International Symposium on Microwave and Optical Technology, Montreal,   Canada, June 20-24, 2001.
  21.        Participation in National Symposium on Advances in Microwaves and Light waves, University of     Delhi South Campus, New Delhi, March 27-28, 2000.
  22.      Participation in Workshop on Modeling, Design and Characterization of Microelectronic Devices, University of Delhi South Campus, New Delhi, March 25-26, 2000.
  23.        Participation inIV Electronics Workshop at A.R.S.D. College from 24th Dec.,1991 to 3rd Jan. 1992.                          

 

 

Administrative Assignments

Administrative Assignments

1.      Member, Departmental Research Committee, Department of Electronic Sc., University of Delhi.( Jan 2017-Jan 2019).

2.      Member, Committee of Courses, Department of Electronic Sc., University of Delhi.( 2013-2015)

3.      Coordinator, Department of Electronic Science. A.R.S.D College (2017-2018; 2Dec 2015-31March 2016; 2013-2014; 2009-2010).

4.      Convener, Purchase Committee, Cluster Innovation Centre, University of Delhi. (Oct.2011-May 2012).

5.      Domestic Bursar, A.R.S.D College (16 May 2011- 14 Sept. 2011).

6.      Jury Team Member, INSPIRE, Department of Science and Technology, Govt. of India. (2011).

7.      Convener, Purchase Committee, Department of Electronic Science. A.R.S.D College. (2017-2018; 2Dec 2015-31March 2016; 2013-2014; 2009-2010).

8.      Member, Time Table Committee, A.R.S.D College. (2017-2018; 2Dec 2015-31March 2016; 2013-2014; 2009-2010; 2008-2009).

9.      Member, Campus Improvement Committee, A.R.S.D College. (2013- 2014; 2009-2010).

10.  Member, Academic Planning Committee, A.R.S.D College (2009-2010).

11.  Convener, Committee for installation of CCTV, A.R.S.D College, (Nov.2012)

12.  Member, Committee for Distribution of Laptops, A.R.S.D College, (Nov. 2012)

13.  In Charge, Electronics Society/ Seminar, A.R S.D College. (April2018-till date; 2017-2018;  2016-2017; 2015-2016; 2014-2015; 2009-2010).

14.  Superintendent, Practical Examination, Dept. of Electronic Sc., A.R.S.D College( Nov/Dec 2017; Nov 2015; 2010-2011).

15.  Superintendent, Practical Examination, Dept. of Physics, A.R.S. D College (2008-2009).

16.  Member, Purchase Committee, Department of Physics, A.R.S.D College.( 2008-2009)

17.  Member, Library Committee, A.R.S.D College. (2007-2008).

18.  Teacher-in-charge, Dept. Of Physics, A.R.S.D College. (1999-2000).

19.  Teacher Representative on the Governing Body, A.R.S.D College. (1995-1996).

Research Guidance

Supervision of Doctoral Thesis: (i)Awarded: 2

                                                    (ii)Under Progress:4

No. of Project Fellows Trained: 2